UTAC Acquire Verigy Systems for Next-Gen DDR3 Memory Devices

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UTAC Taiwan Acquires Verigy V93000 HSM2200 Systems for High-Volume Test of Next Generation DDR3 Memory Devices

CUPERTINO, Calif. --(Business Wire)-- Jun. 5, 2008 Verigy (NASDAQ:VRGY), a premier semiconductor test company, today announced that United Test and Assembly Center Taiwan (UTAC Taiwan), a leading semiconductor test and assembly service provider, has acquired multiple V93000 HSM2200 high-speed memory test systems for high-volume production of its latest DDR3 devices. UTAC Taiwan selected the HSM2200 as its next-generation memory test platform for its proven performance on high-speed DDR2 (over 1 Gigabit-per-second) and DDR3 high-speed memory, and for the high manufacturing yields that it enables.

The V93000 HSM2200 is the only high-speed memory test solution available today for low-cost mass production of the DDR3 SDRAM increasingly used in computing and consumer electronics. The HSM2200 performs highly accurate at-speed I/O and memory core access testing of up to 2.2 Gigabits-per-second (Gbps), covering the entire DDR3 generation speed range and beyond. The HSM2200 is "future-ready" for upgradeability to higher data rates and greater parallelism, providing unique lifetime value and return on investment.

Memory technology is continuously evolving to keep pace with the growing bandwidth demands of desktop PCs, notebooks and servers. DDR3 SDRAM is the next-generation main memory standard, expected to ramp through 2008 and 2009 to become the dominant commodity SDRAM technology. By 2011, DDR3 is expected to grow to approximately 70 percent of total DRAM memory unit production; today, DDR3 represents only about five percent of the unit volume. DDR3 features per-pin data rates of up to 1,600-2,133 Megabits-per-second (Mbps), doubling the maximum data transfer rates of today's main memory standard, DDR2. The next generation, DDR4, is expected to follow soon, with data transfer rates of 3.2 Gbps and higher.

"Given the rapid growth forecast for DDR3 devices plus our customers' critical need to achieve rapid time-to-market, UTAC Taiwan is now positioned to support and share in the success of both our customers and the market," said Mr. Johnson Hsu Ying-Ling, President of Taiwan Operations. "The V93000 HSM2200 provides the best performance available for high-speed DRAM testing. This capability, now in our suite of tools, ensures that we will continue to meet our customers' demand for complete packaging and test solutions for DDR3 and DDR2 high-speed memory."

About the V93000 HSM2200

SDRAM Tester Environment

The commodity SDRAM test equipment currently available on the market provides just enough speed bandwidth for testing high-end DDR2 devices at 800 Mbps and 1 Gbps. For SDRAM manufacturers preparing for the DDR3 ramp, Verigy's V93000 HSM2200 platform is the only solution proven for high-volume manufacturing that offers test speeds of 2 Gbps and above.

Traditionally, SDRAM manufacturers have been forced to purchase a new generation of automated test equipment (ATE) every three to four years to meet the requirements of each new SDRAM generation. In order to extend the useful life of the ATE platforms, manufacturers have been moving ATE equipment from at-speed test to low-speed core test. This strategy has been effective for previous generations of SDRAM, but it will not be an economical option for DDR3, since it would mean deploying a 2 Gbps DDR3 test system for only a 250 MHz core test application, where it competes with dedicated low-speed memory core testers, engineered for highest throughput at low-speed test.

"The looming DDR3 wave creates a technology disconnect that will require ATE capable of addressing the performance and cost challenges of DRAM test beyond the Gigabit speed class," said Hans-Juergen Wagner, vice president and general manager, Semiconductor Test Solutions, Verigy. "The V93000 HSM2200 solution fulfills SDRAM manufacturers' need for an economical mass production test solution, and offers them not only the required DDR3 speed performance, but also the headroom that creates unprecedented lifetime value and investment protection."

The V93000 HSM platform is also engineered to be future-ready, upgradeable to data rates beyond those of the DDR3 generation, providing investment protection as DDR3, DDR4 and future SDRAM technologies emerge. This ensures more than 10 years of cutting-edge lifetime value across two to three SDRAM device generations and unmatched overall test economics for outstanding return on investment.

Accurate Yield Data and Top Speed-Binning

The V93000 HSM2200 achieves true 2.2 Gbps performance, without compromise to accuracy, test coverage, yield or functionality. This provides the most accurate volume yield data for fast yield learning and best time-to-volume. The HSM2200 also provides superior speed-binning, enabling accurate specification of devices even at the top speed bins for increased revenue from yield.

Integrated High-Throughput Test Cell and Low Cost-of-Test

The V93000 HSM2200 is available as part of an engineered and validated manufacturing test cell, ensuring reliable operation, high uptime and seamless support. It is also designed for efficient one-man operation, small footprint, lowest handler index time overhead and best temperature accuracy. In addition, the V93000 HSM2200 offers cost-of-test value due to its proven test processor-per-pin throughput. This cost-efficient mass production solution provides best-in-class parallel test of up to 64 DDR3 devices, suitable for the ramp of DDR3. By the time DDR3 is expected to enter high-volume manufacturing in early 2009, the HSM2200 test-cell can be seamlessly upgraded to test 128 DDR3 devices in parallel, setting the benchmark for cost-of-test in the 2 Gbps and above speed class.

Proven Platform

The V93000 HSM2200 is based on the proven per-pin timing architecture of the V93000 HSM3600. This well accepted, high-volume manufacturing solution for highest-speed specialty memories features data rates up to 4.8 Gbps and is recognized for its superior performance and accuracy. HSM2200 customers will also benefit from the ease of correlation and test program transfer from R&D to production; the V93000 HSM Series is the established engineering solution at nearly all SDRAM manufacturers' research and development facilities and the de facto standard at key memory validation labs for DDR3 as well as specialty memory devices.

About Verigy

Verigy designs, develops, manufactures, sells and services advanced semiconductor test systems and solutions for the flash memory, high-speed memory and system-on-chip (SoC) markets. Verigy's scalable platforms are used by leading companies worldwide in design validation, characterization, and high-volume manufacturing test. Advanced analysis tools accelerate design debug and yield ramp processes for Verigy's customers. Information about Verigy can be found at http://www.verigy.com.