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SAN JOSE, Calif. -- Apr. 2, 2008 Samsung Semiconductor, the world leader in advanced memory technology and the leading producer of DRAM (dynamic random access memory), announced today that it is now mass producing the lowest powered, highest density DDR2 memory available for servers.

Samsung's new 2Gb-based DDR2 DRAM offers up to a 50 percent reduction in power at 1.55V, which represents the best power performance for the highest density server memory today.

"By combining a 2Gb chip density with a 1.55 voltage using 60nm-class technology, we are delivering a tremendous value proposition to server OEMs," said Kevin Lee, vice president, technical memory marketing, Samsung Semiconductor, Inc. "Samsung's 2Gb-based DDR2 memory devices offer the major energy savings that most IT managers are seeking."

Today, data centers with arrays of servers suffer from rapidly increasing energy costs triggered by power-hungry storage drives and soaring electricity fees. Faced with these cost spikes, IT managers are looking to low-power memory as a key means of driving energy costs downward.

The new 2Gb-based fully buffered DIMM DDR2, which doubles the previous highest server chip density, is being produced in 4GB and 8GB modules, using 60 nm (nanometer) process technology, the most advanced production process for DRAM today. Samsung also now offers a 1Gb low-power DDR2 chip, allowing it to provide a complete range of 1GB to 8GB low-power server modules.

According to Victor de Dios, president of DE DIOS & ASSOCIATES, a memory industry analysis firm in Newark, CA, "DDR2 now accounts for almost 95 percent of the memory used in enterprise systems. The 2Gb, 1.55-volt DDR2 addresses the megabyte needs of a power-sensitive server market that will register a 110 percent increase in 4GB-and-higher memory densities from 2008 to 2009, with expansion into other applications beyond that."

About Samsung Electronics

For information, please visit http://www.samsung.com.