AMD and IBM Talk About 45NM Chips with Ultra Low-K
Posted: Tue Dec 12, 2006 3:45 pm
AMD and IBM Detail Early Results Using Immersion and Ultra Low-K in 45NM Chips
-- Advanced technologies provide improved performance and efficiency while reducing complexity in microprocessor design and manufacturing --
[quote]San Francisco, CA. -- December 12, 2006 --At the International Electron Device Meeting (IEDM) today, IBM (NYSE: IBM) and AMD (NYSE: AMD) presented papers describing the use of immersion lithography, ultra-low-K interconnect dielectrics, and multiple enhanced transistor strain techniques for application to the 45nm microprocessor process generation. AMD and IBM expect the first 45nm products using immersion lithography and ultra-low-K interconnect dielectrics to be available in mid-2008.
“As the first microprocessor manufacturers to announce the use of immersion lithography and ultra-low-K interconnect dielectrics for the 45nm technology generation, AMD and IBM continue to blaze a trail of innovation in microprocessor process technology,â€
-- Advanced technologies provide improved performance and efficiency while reducing complexity in microprocessor design and manufacturing --
[quote]San Francisco, CA. -- December 12, 2006 --At the International Electron Device Meeting (IEDM) today, IBM (NYSE: IBM) and AMD (NYSE: AMD) presented papers describing the use of immersion lithography, ultra-low-K interconnect dielectrics, and multiple enhanced transistor strain techniques for application to the 45nm microprocessor process generation. AMD and IBM expect the first 45nm products using immersion lithography and ultra-low-K interconnect dielectrics to be available in mid-2008.
“As the first microprocessor manufacturers to announce the use of immersion lithography and ultra-low-K interconnect dielectrics for the 45nm technology generation, AMD and IBM continue to blaze a trail of innovation in microprocessor process technology,â€