Operating at 1.2V and 1066Mbps
New ultra small chip employs state-of-the-art 30nm process
TOKYO, JAPAN, April 7, 2011 – Elpida Memory, Inc. (TOKYO: 6665), Japan's leading global supplier of Dynamic Random Access Memory (DRAM), today announced that it has developed a 4-gigabit DDR2 Mobile RAMTM that employs state-of-the-art 30nm process. This new Mobile RAM features a low operating voltage of 1.2V, achieves a 1066Mbps high-speed data transfer rate, and uses roughly 30% less operating current compared with stacking two of Elpida's 40nm 2-gigabit products. Through sophisticated circuit design and advanced process technology, this product achieves the world's smallest class in chip size for a 4-gigabit LPDDR2. In addition, it is an eco-friendly DRAM equipped with a low power feature that targets mobile devices such as smart phones and tablet PCs by contributing to extended operating times of battery-powered devices.
Currently, the rapidly expanding market for smart phones and tablet PCs is striving to expand the features of its operating systems. As a result, the ideal density of DRAMs is also rapidly on the rise, and there is an increasing need for high density DRAMs – 8-gigabit for high-end smart phones and 16-gigabit for high-end tablet PCs. At the same time, there is a strong demand for smaller, thinner, and lighter DRAM packages, and attention is being focused on advanced package technologies such as Package on Package (PoP) and Multi Chip Package (MCP).
Elpida plans to ship the new DDR2 Mobile RAM as PoP, FBGA packages, and as a bare chip for MCPs. The company's PoP and FBGA packages fully leverage die-stacking technology to provide an extensive line-up of 8-gigabit to 16-gigabit products that can meet a variety of customer needs. The new 4-gigabit DDR2 Mobile RAM achieves the thinnest package yet at 0.8mm (in the case of an 8-gigabit product consisting of two stacked 4-gigabit chips), which meets the need for DRAM that is not only higher density, but also thinner packages.
Sample shipments of the new 4-gigabit DDR2 Mobile RAM will begin in April, and mass production is scheduled to start at Elpida's Hiroshima Plant in June of this year. Production is also planned at Rexchip Electronics Corporation in order to guarantee a stable product supply.
Elpida, a leading provider of DRAM for mobile devices, uses advanced technology to support the development of the next generation of smart phones and tablet PCs.
4-gigabit DDR2 Mobile RAM Product Features
Product name ECB440ABACN (Bare chip)
Manufacturing process 30nm CMOS
Memory density 4-gigabit
Data width x16-bit / x32-bit
Per pin data transfer rate 1066Mbps (Max.)
Supply voltage VDD2/VDDQ: 1.2V, VDD1: 1.8V
Operating temperature range –30 to 85°C
Shipment configuration Bare chip, PoP, FBGA
About Elpida
Elpida Memory, Inc. (Tokyo: 6665) is a leading manufacturer of Dynamic Random Access Memory (DRAM) integrated circuits. The company's design, manufacturing and sales operations are backed by world class technological expertise. Its 300mm manufacturing facilities, consisting of its Hiroshima Plant and a Taiwan-based joint venture, Rexchip Electronics, utilize the most advanced manufacturing technologies available. Elpida's portfolio features such characteristics as high-density, high-speed, low power and small packaging profiles. The company provides DRAM solutions across a wide range of applications, including personal computers, servers, mobile devices and digital consumer electronics. More information can be found at http://www.elpida.com.