-Achievements Can Help Both Companies Meet Aggressive Goals for Increasing Performance, While Decreasing Power Requirements, of Future Microprocessors-
WASHINGTON, D.C.-Dec. 6, 2005-In papers presented at the International
Electron Devices Meeting (IEDM) in Washington, D.C., IBM (NYSE: IBM) and
AMD (NYSE: AMD) today detailed their progress in bringing new, advanced
semiconductor process technologies and materials to the 65 nanometer
(nm) technology generation.
The companies announced that they have successfully combined embedded
Silicon Germanium (e-SiGe) with Dual Stress Liner (DSL) and Stress
Memorization technology (SMT) on Silicon-On-Insulator (SOI) wafers,
resulting in a 40 percent increase in transistor performance compared to
similar chips produced without stress technology, while controlling
power consumption and heat dissipation. The new process technologies
reduce interconnect delay through the use of lower dielectric constant
(lower-K) insulators, which can improve overall product performance and
lower power consumption. In addition, the new technologies have shown
ability to be manufactured at the 65nm generation and scaleable for use
in future generations.
"Our joint work on developing advanced process technologies continues to
ensure we can create and provide the highest performance, lowest power
processors on the market," said Nick Kepler, vice president of logic
technology development at AMD. "Yet again, we can add another
achievement to our list of successes that demonstrate how shared
expertise and skills can result in overcoming roadblocks and creating
more valuable innovations for customers."
"At IBM, we strongly believe that our unique joint development
partnership with AMD at East Fishkill, N.Y. is key to overcoming power
and heat challenges as the industry reaches near atomic scales," said
Gary Patton, vice president, technology development at IBM's
Semiconductor Research and Development Center. "The successful
integration of leadership technologies from IBM, AMD and our partners at
65nm demonstrates the strength of our collaborative innovation model."
Additional details about third generation strain technology innovations
from AMD and IBM will be disclosed at the 2005 IEEE International
Electron Devices Meeting, December 5-7, 2005 in Washington, D.C. This
technology was developed as part of the AMD and IBM joint development
alliance at AMD's fabrication facilities in Dresden, Germany, and at the
IBM Semiconductor Research and Development Center in East Fishkill, N.Y.
About AMD
AMD (NYSE:AMD) designs and produces innovative microprocessors, Flash
memory devices and low-power processor solutions for the computer,
communications and consumer electronics industries. AMD is dedicated to
delivering standards-based, customer-focused solutions for technology
users, ranging from enterprises and governments to individual consumers.
For more information visit http://www.amd.com
About IBM
IBM semiconductors are a major contributor to the company's position as
the world's largest information technology company. Its chip products
and solutions power IBM eServer and TotalStorage systems as well as many
of the world's best-known electronics brands. IBM semiconductor
innovations include dual-core microprocessors, copper wiring,
silicon-on-insulator and silicon germanium transistors, strained
silicon, and eFUSE, a technology that enables computer chips to
automatically respond to changing conditions. More information is
available at: http://www.ibm.com/chips
